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SI1032R-T1
SI1032R-T1
MOSFETs SI1032R-T1
Vishay
SI1032R-T1
--
Diodes, Transistors and Thyristors
MOSFETs
SI1032R-T1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width0.76
Package Height0.7
Package Length1.58
Product CategoryPower MOSFET
Supplier PackageSC-75A
Process TechnologyTrenchFET
Standard Package NameSC
Typical Fall Time (ns)25(Max)
Typical Rise Time (ns)25(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)280
Typical Gate Charge @ Vgs (nC)750@4.5V
Maximum Gate Source Voltage (V)±6
Typical Turn-On Delay Time (ns)50(Max)
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)50(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.14
Maximum Drain Source Resistance (mOhm)5000@4.5V
Description
Trans MOSFET N-CH 20V 0.14A 3-Pin SC-75A T/R
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