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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI1417EDH-T1-E3
SI1417EDH-T1-E3
MOSFETs SI1417EDH-T1-E3
Vishay
SI1417EDH-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
SI1417EDH-T1-E3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width1.25
Package Height1(Max)
Package Length2
Product CategoryPower MOSFET
Supplier PackageSC-70
Process TechnologyTrenchFET
Standard Package NameSOT
Typical Fall Time (ns)4900
Typical Rise Time (ns)1400
Number of Elements per Chip1
Maximum Power Dissipation (mW)1560
Typical Gate Charge @ Vgs (nC)5.8@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)600
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)4900
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.7
Maximum Drain Source Resistance (MOhm)85@4.5V
Description
Trans MOSFET P-CH 12V 2.7A 6-Pin SC-70 T/R
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