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MOSFETs SI1539CDL-T1-BE3
Vishay
SI1539CDL-T1-BE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 6 |
| Automotive | No |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual |
| Package Width | 1.25 |
| Package Height | 1(Max) |
| Package Length | 2 |
| Product Category | Power MOSFET |
| Supplier Package | SOT-363 |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Typical Fall Time (ns) | 9|15@N Channel|8|10@P Channel |
| Typical Rise Time (ns) | 14|25@N Channel|9|19@P Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 290 |
| Typical Gate Charge @ 10V (nC) | 1@N Channel|1.5@P Channel |
| Typical Gate Charge @ Vgs (nC) | 1@10V|0.55@4.5V@N Channel|1.5@10V|0.8@4.5V@P Channel |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 2|26@N Channel|1|32@P Channel |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 11|14@N Channel|4|8@P Channel |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.7@N Channel|0.4@P Channel |
| Typical Input Capacitance @ Vds (pF) | 28@15V@N Channel|34@15V@P Channel |
| Maximum Drain Source Resistance (MOhm) | 388@10V@N Channel|890@10V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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