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MOSFETs SI1551DL-T1-GE3
Vishay
SI1551DL-T1-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual |
| Package Width | 1.25 |
| Package Height | 1(Max) |
| Package Length | 2 |
| Product Category | Power MOSFET |
| Supplier Package | SC-70 |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 15@N Channel|12@P Channel |
| Typical Rise Time (ns) | 30@N Channel|20@P Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 300 |
| Typical Gate Charge @ Vgs (nC) | 0.72@4.5V@N Channel|0.52@4.5V@P Channel |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Output Capacitance (pF) | 15@N Channel|12@P Channel |
| Typical Turn-On Delay Time (ns) | 23@N Channel|7.5@P Channel |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 2.3@N Channel|2.9@P Channel |
| Typical Turn-Off Delay Time (ns) | 10@N Channel|8.5@P Channel |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 0.13@N Channel|0.14@P Channel |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Minimum Gate Threshold Voltage (V) | 0.6 |
| Typical Gate to Source Charge (nC) | 0.22@N Channel|0.11@P Channel |
| Typical Reverse Recovery Time (ns) | 20@N Channel|25@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.29@N Channel|0.41@P Channel |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Drain Source Resistance (mOhm) | 1900@4.5V@N Channel|995@4.5V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 12 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 0.6@N Channel|1@P Channel |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.3 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 0.3@N Channel|0.4@P Channel |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 460 |
| Description |
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