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SI1902DL-T1-GE3
SI1902DL-T1-GE3
MOSFETs SI1902DL-T1-GE3
Vishay
SI1902DL-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width1.25
Package Height1(Max)
Package Length2
Product CategoryPower MOSFET
Supplier PackageSC-70
Process TechnologyTrenchFET
Standard Package NameSOT
Typical Fall Time (ns)10
Typical Rise Time (ns)16
Number of Elements per Chip2
Maximum Power Dissipation (mW)300
Typical Gate Charge @ Vgs (nC)0.8@4.5V
Maximum Gate Source Voltage (V)±12
Typical Output Capacitance (pF)18
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)10
Typical Gate to Drain Charge (nC)0.3
Maximum Gate Threshold Voltage (V)1.5
Typical Gate to Source Charge (nC)0.06
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.66
Maximum Drain Source Resistance (mOhm)385@4.5V
Description
Trans MOSFET N-CH Si 20V 0.66A 6-Pin SC-70 T/R
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