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MOSFETs SI1926DL-T1-E3
Vishay
SI1926DL-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.10.00.80 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 1.25 |
| Package Height | 1(Max) |
| Package Length | 2 |
| Product Category | Power MOSFET |
| Supplier Package | SC-70 |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 14 |
| Typical Rise Time (ns) | 12 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 300 |
| Typical Gate Charge @ 10V (nC) | 0.9 |
| Typical Gate Charge @ Vgs (nC) | 0.5@4.5V|0.9@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 7.5 |
| Typical Turn-On Delay Time (ns) | 6.5 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 13 |
| Typical Gate to Drain Charge (nC) | 0.15 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Typical Gate to Source Charge (nC) | 0.2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.34 |
| Typical Input Capacitance @ Vds (pF) | 18.5@30V |
| Typical Reverse Recovery Charge (nC) | 13 |
| Maximum Drain Source Resistance (mOhm) | 1400@10V |
| Maximum Gate Source Leakage Current (nA) | 150 |
| Description |
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