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SI1958DH-T1-E3
SI1958DH-T1-E3
MOSFETs SI1958DH-T1-E3
Vishay
SI1958DH-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width1.25
Package Height1(Max)
Package Length2
Product CategoryPower MOSFET
Supplier PackageSC-70
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameSOT
Typical Fall Time (ns)10
Typical Rise Time (ns)25
Number of Elements per Chip2
Maximum Power Dissipation (mW)740
Typical Gate Charge @ 10V (nC)2.5
Typical Gate Charge @ Vgs (nC)1.2@4.5V|2.5@10V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)10
Maximum Gate Threshold Voltage (V)1.6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.3
Typical Input Capacitance @ Vds (pF)105@10V
Maximum Drain Source Resistance (mOhm)205@4.5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R
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