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SI2301BDS-T1-BE3
SI2301BDS-T1-BE3
MOSFETs SI2301BDS-T1-BE3
Vishay
SI2301BDS-T1-BE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.4(Max)
Package Height1.02(Max)
Package Length3.04(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-23
Typical Fall Time (ns)20
Typical Rise Time (ns)40
Number of Elements per Chip1
Maximum Power Dissipation (mW)900
Typical Gate Charge @ Vgs (nC)4.5@4.5V
Maximum Gate Source Voltage (V)±8
Typical Output Capacitance (pF)95
Typical Turn-On Delay Time (ns)20
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)30
Typical Gate to Drain Charge (nC)1.1
Maximum Gate Threshold Voltage (V)0.95
Typical Gate to Source Charge (nC)0.7
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.2
Typical Input Capacitance @ Vds (pF)375@6V
Maximum Drain Source Resistance (mOhm)100@4.5V
Description
Trans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23
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