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SI2301DS-T3
SI2301DS-T3
MOSFETs SI2301DS-T3
Vishay
SI2301DS-T3
--
Diodes, Transistors and Thyristors
MOSFETs
SI2301DS-T3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.4(Max)
Package Height1.02(Max)
Package Length3.04(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-23
Standard Package NameSOT
Typical Fall Time (ns)34
Typical Rise Time (ns)36
Number of Elements per Chip1
Maximum Power Dissipation (mW)1250
Typical Gate Charge @ Vgs (nC)5.8@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)42
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.3
Typical Input Capacitance @ Vds (pF)415@6V
Maximum Drain Source Resistance (mOhm)130@4.5V
Description
Trans MOSFET P-CH 20V 2.3A 3-Pin SOT-23 T/R
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