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SI2303CDS-T1-GE3
SI2303CDS-T1-GE3
MOSFETs SI2303CDS-T1-GE3
Vishay
SI2303CDS-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.4(Max)
Package Height1.02(Max)
Package Length3.04(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-23
Process TechnologyTrenchFET
Standard Package NameSOT
Typical Fall Time (ns)9
Typical Rise Time (ns)37
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Typical Gate Charge @ 10V (nC)4
Typical Gate Charge @ Vgs (nC)4@10V|2@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)35
Typical Turn-On Delay Time (ns)36
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)12
Typical Gate to Drain Charge (nC)1
Maximum Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)0.6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.7
Typical Input Capacitance @ Vds (pF)155@15V
Typical Reverse Recovery Charge (nC)9
Maximum Drain Source Resistance (mOhm)190@10V
Description
Trans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R
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