HTS | 8541.21.00.95 |
PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Pin Count | 3 |
Automotive | No |
PCB changed | 3 |
Part Status | Unconfirmed |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 1.4(Max) |
Package Height | 1.02(Max) |
Package Length | 3.04(Max) |
Product Category | Power MOSFET |
Supplier Package | SOT-23 |
Maximum IDSS (uA) | 1 |
Process Technology | TrenchFET |
Typical Fall Time (ns) | 10 |
Typical Rise Time (ns) | 30 |
Number of Elements per Chip | 1 |
Maximum Gate Resistance (Ohm) | 3.3 |
Minimum Gate Resistance (Ohm) | 1.1 |
Maximum Power Dissipation (mW) | 1250 |
Typical Gate Charge @ Vgs (nC) | 7.5@4.5V |
Maximum Gate Source Voltage (V) | ±8 |
Typical Output Capacitance (pF) | 100 |
Typical Turn-On Delay Time (ns) | 9 |
Maximum Drain Source Voltage (V) | 20 |
Typical Gate Plateau Voltage (V) | 1.4 |
Typical Turn-Off Delay Time (ns) | 35 |
Maximum Diode Forward Voltage (V) | 1.2 |
Typical Diode Forward Voltage (V) | 0.8 |
Typical Gate to Drain Charge (nC) | 1.2 |
Maximum Gate Threshold Voltage (V) | 0.85 |
Minimum Gate Threshold Voltage (V) | 0.45 |
Typical Gate to Source Charge (nC) | 1.4 |
Typical Reverse Recovery Time (ns) | 13 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 3.9 |
Operating Junction Temperature (°C) | -55 to 150 |
Maximum Drain Source Resistance (mOhm) | 31@4.5V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 8 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 15 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 1.25 |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 5 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 166 |
Description | |