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MOSFETs SI2316BDS-T1-GE3
Vishay
SI2316BDS-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 3 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 1.4(Max) |
| Package Height | 1.02(Max) |
| Package Length | 3.04(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 7|23 |
| Typical Rise Time (ns) | 11|65 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1250 |
| Typical Gate Charge @ 10V (nC) | 6.35 |
| Typical Gate Charge @ Vgs (nC) | 6.35@10V|3.16@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 65 |
| Typical Turn-On Delay Time (ns) | 4.5|20 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 11|12 |
| Typical Gate to Drain Charge (nC) | 1.1 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Typical Gate to Source Charge (nC) | 1.56 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.9 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 350@15V |
| Typical Reverse Recovery Charge (nC) | 4 |
| Maximum Drain Source Resistance (mOhm) | 50@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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