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SI2336DS-T1-BE3
SI2336DS-T1-BE3
MOSFETs SI2336DS-T1-BE3
Vishay
SI2336DS-T1-BE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.4(Max)
Package Height1.02(Max)
Package Length3.04(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-23
Process TechnologyTrenchFET
Typical Fall Time (ns)10
Typical Rise Time (ns)10
Number of Elements per Chip1
Maximum Power Dissipation (mW)1250
Typical Gate Charge @ Vgs (nC)5.7@4.5V|10@8V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)6
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.3
Typical Input Capacitance @ Vds (pF)560@15V
Maximum Drain Source Resistance (mOhm)42@4.5V
Description
Trans MOSFET N-CH 30V 4.3A 3-Pin SOT-23 T/R
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