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MOSFETs SI3529DV-T1-E3
Vishay
SI3529DV-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual |
| Package Width | 1.65 |
| Package Height | 1(Max) |
| Package Length | 3.05 |
| Product Category | Power MOSFET |
| Supplier Package | TSOP |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 16@P Channel|6|8@N Channel|7.5 |
| Typical Rise Time (ns) | 65@N Channel|12.5|38@P Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1150 |
| Typical Gate Charge @ 10V (nC) | 4.6@N Channel|4.8@P Channel |
| Typical Gate Charge @ Vgs (nC) | 4.6@10V@N Channel|4.8@10V@P Channel |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 2.5|13@N Channel|5|23@P Channel |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 8|5@N Channel|10|20@P Channel |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2.25@N Channel|1.76@P Channel |
| Typical Input Capacitance @ Vds (pF) | 205@20V@N Channel|175@20V@P Channel |
| Maximum Drain Source Resistance (mOhm) | 125@10V@N Channel|215@10V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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