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SI4158DY-T1-GE3
SI4158DY-T1-GE3
MOSFETs SI4158DY-T1-GE3
Vishay
SI4158DY-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Standard Package NameSOP
Typical Fall Time (ns)32
Typical Rise Time (ns)20
Number of Elements per Chip1
Maximum Power Dissipation (mW)3000
Typical Gate Charge @ 10V (nC)88
Typical Gate Charge @ Vgs (nC)88@10V|40@4.5V
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)37
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)68
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)36.5
Typical Input Capacitance @ Vds (pF)5710@10V
Maximum Drain Source Resistance (mOhm)2.5@10V
Description
Trans MOSFET N-CH 20V 36.5A 8-Pin SOIC N T/R
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