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SI4420DYPBF
SI4420DYPBF
MOSFETs SI4420DYPBF
Infineon
SI4420DYPBF
--
Diodes, Transistors and Thyristors
MOSFETs
SI4420DYPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)47
Typical Rise Time (ns)10
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)52
Typical Gate Charge @ Vgs (nC)52@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)1100
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)55
Typical Gate to Drain Charge (nC)12
Maximum Gate Threshold Voltage (V)1(Min)
Typical Gate to Source Charge (nC)8.7
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12.5
Typical Input Capacitance @ Vds (pF)2240@15V
Maximum Drain Source Resistance (MOhm)9@10V
Description
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC Tube
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