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SI4421DY-T1-GE3
SI4421DY-T1-GE3
MOSFETs SI4421DY-T1-GE3
Vishay
SI4421DY-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusNRND
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)170
Typical Rise Time (ns)90
Number of Elements per Chip1
Maximum Power Dissipation (mW)3000
Typical Gate Charge @ Vgs (nC)82@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)45
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)350
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10
Maximum Drain Source Resistance (mOhm)8.75@4.5V
Description
Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R
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