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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI4532ADY-T1-E3
SI4532ADY-T1-E3
MOSFETs SI4532ADY-T1-E3
Vishay
SI4532ADY-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
SI4532ADY-T1-E3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)8@N Channel|10@P Channel
Typical Rise Time (ns)10@N Channel|9@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)10@P Channel|8@N Channel
Typical Gate Charge @ Vgs (nC)8@10V@N Channel|10@10V@P Channel
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8@P Channel|12@N Channel
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)23@N Channel|21@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.9@N Channel|3.5@P Channel
Maximum Drain Source Resistance (mOhm)65@10V@N Channel|85@10V@P Channel
Description
Trans MOSFET N/P-CH 30V 3.9A/3.5A 8-Pin SOIC N T/R
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