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MOSFETs SI4532CDY-T1-GE3
Vishay
SI4532CDY-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual Dual Drain |
| Package Width | 4(Max) |
| Package Height | 1.55(Max) |
| Package Length | 5(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SOIC N |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 6|9@N Channel|7.7|17@P Channel |
| Typical Rise Time (ns) | 12|16@N Channel|13|40@P Channel |
| Number of Elements per Chip | 2 |
| Maximum Gate Resistance (Ohm) | 6.2@N Channel|20@P Channel |
| Minimum Gate Resistance (Ohm) | 0.6@N Channel|2@P Channel |
| Maximum Power Dissipation (mW) | 1780 |
| Typical Gate Charge @ 10V (nC) | 6@N Channel|7.8@P Channel |
| Typical Gate Charge @ Vgs (nC) | 6@10V|2.75@4.5V@N Channel|7.8@10V|4.1@4.5V@P Channel |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 65@N Channel|67@P Channel |
| Typical Turn-On Delay Time (ns) | 7|16@N Channel|5.5|40@P Channel |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Gate Plateau Voltage (V) | 3.8@N Channel|3.1@P Channel |
| Typical Turn-Off Delay Time (ns) | 9|14@N Channel|17|20@P Channel |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 0.9@N Channel|1.8@P Channel |
| Maximum Gate Threshold Voltage (V) | 3 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 1.3 |
| Typical Reverse Recovery Time (ns) | 14@N Channel|17@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.9@N Channel|3.4@P Channel |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 305@15V@N Channel|340@15V@P Channel |
| Typical Reverse Recovery Charge (nC) | 6@N Channel|11@P Channel |
| Maximum Drain Source Resistance (mOhm) | 47@10V@N Channel|89@10V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 24@N Channel|15@P Channel |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1.78 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 29@15V@N Channel|51@15V@P Channel |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 4.9@N Channel|3.4@P Channel |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 120@N Channel|110@P Channel |
| Description |
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