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SI4539DY
SI4539DY
MOSFETs SI4539DY
onsemi
SI4539DY
--
Diodes, Transistors and Thyristors
MOSFETs
SI4539DY.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width3.9
Package Height1.65(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackageSOIC N
Standard Package NameSOP
Typical Fall Time (ns)9@N Channel|55@P Channel
Typical Rise Time (ns)14@N Channel|10@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)18@N Channel|19@P Channel
Typical Gate Charge @ Vgs (nC)18@10V@N Channel|19@10V@P Channel
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)8@N Channel|11@P Channel
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)23@N Channel|90@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7@N Channel|5@P Channel
Typical Input Capacitance @ Vds (pF)650@15V@N Channel|730@15V@P Channel
Maximum Drain Source Resistance (MOhm)28@10V@N Channel|52@10V@P Channel
Description
Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC N
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