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SI4559ADY-T1-GE3
SI4559ADY-T1-GE3
MOSFETs SI4559ADY-T1-GE3
Vishay
SI4559ADY-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP|N
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)10@N Channel|30@P Channel
Typical Rise Time (ns)65|15@N Channel|70|13@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)13@N Channel|14.5@P Channel
Typical Gate Charge @ Vgs (nC)13@10V|6@4.5V@N Channel|14.5@10V|8@4.5V@P Channel
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15|10@N Channel|30|10@P Channel
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)15|20@N Channel|40|35@P Channel
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.3@N Channel|3@P Channel
Typical Input Capacitance @ Vds (pF)665@15V@N Channel|650@15V@P Channel
Maximum Drain Source Resistance (mOhm)58@10V@N Channel|120@10V@P Channel
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N/P-CH 60V 4.3A/3A 8-Pin SOIC N T/R
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