Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 8 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | P|N |
Configuration | Dual Dual Drain |
Package Width | 4(Max) |
Package Height | 1.55(Max) |
Package Length | 5(Max) |
Product Category | Power MOSFET |
Supplier Package | SOIC N |
Maximum IDSS (uA) | 1 |
Process Technology | TrenchFET |
Standard Package Name | SOP |
Typical Fall Time (ns) | 10@N Channel|30@P Channel |
Typical Rise Time (ns) | 65|15@N Channel|70|13@P Channel |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 2000 |
Typical Gate Charge @ 10V (nC) | 13@N Channel|14.5@P Channel |
Typical Gate Charge @ Vgs (nC) | 13@10V|6@4.5V@N Channel|14.5@10V|8@4.5V@P Channel |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 15|10@N Channel|30|10@P Channel |
Maximum Drain Source Voltage (V) | 60 |
Typical Turn-Off Delay Time (ns) | 15|20@N Channel|40|35@P Channel |
Maximum Gate Threshold Voltage (V) | 3 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 4.3@N Channel|3@P Channel |
Typical Input Capacitance @ Vds (pF) | 665@15V@N Channel|650@15V@P Channel |
Maximum Drain Source Resistance (mOhm) | 58@10V@N Channel|120@10V@P Channel |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |