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SI4559EY-T1
SI4559EY-T1
MOSFETs SI4559EY-T1
Vishay
SI4559EY-T1
--
Diodes, Transistors and Thyristors
MOSFETs
SI4559EY-T1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Standard Package NameSOP
Typical Fall Time (ns)11@N Channel|35@P Channel
Typical Rise Time (ns)11@N Channel|10@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)2400
Typical Gate Charge @ 10V (nC)19@N Channel|16@P Channel
Typical Gate Charge @ Vgs (nC)19@10V@N Channel|16@10V@P Channel
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)13@N Channel|8@P Channel
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)36@N Channel|12@P Channel
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.5@N Channel|3.1@P Channel
Maximum Drain Source Resistance (mOhm)55@10V@N Channel|120@10V@P Channel
Description
Trans MOSFET N/P-CH 60V 4.5A/3.1A 8-Pin SOIC N T/R
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