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MOSFETs SI4565DY-T1-E3
Vishay
SI4565DY-T1-E3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual Dual Drain |
| Package Width | 4(Max) |
| Package Height | 1.55(Max) |
| Package Length | 5(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SOIC N |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 8@N Channel|38@P Channel |
| Typical Rise Time (ns) | 12@P Channel|11@N Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Gate Charge @ Vgs (nC) | 8@4.5V@N Channel|9@4.5V@P Channel |
| Maximum Gate Source Voltage (V) | ±16@P Channel|±12@N Channel |
| Typical Turn-On Delay Time (ns) | 7@N Channel|8@P Channel |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 27@N Channel|74@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.3@P Channel|3.9@N Channel |
| Typical Input Capacitance @ Vds (pF) | 805@20V@P Channel|700@20V@N Channel |
| Maximum Drain Source Resistance (mOhm) | 40@10V@N Channel|54@10V@P Channel |
| Description |
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