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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI4569DY-T1-E3
SI4569DY-T1-E3
MOSFETs SI4569DY-T1-E3
Vishay
SI4569DY-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
SI4569DY-T1-E3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Standard Package NameSOP
Typical Fall Time (ns)6|5@N Channel|54|60@P Channel
Typical Rise Time (ns)105@P Channel|60@N Channel|15|11
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)21@N Channel|41@P Channel
Typical Gate Charge @ Vgs (nC)21@10V|9.6@4.5V@N Channel|41@10V|21@4.5V@P Channel
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)12@N Channel|6|7|26@P Channel
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)24|51|60@P Channel|22@N Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6@N Channel|6.1@P Channel
Typical Input Capacitance @ Vds (pF)855@20V@N Channel|1505@20V@P Channel
Maximum Drain Source Resistance (mOhm)29@10V@P Channel|27@10V@N Channel
Description
Trans MOSFET N/P-CH 40V 6A/6.1A 8-Pin SOIC N T/R
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