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SI4618DY-T1-GE3
SI4618DY-T1-GE3
MOSFETs SI4618DY-T1-GE3
Vishay
SI4618DY-T1-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)8|34@Channel 1|45@Channel 2
Typical Rise Time (ns)22|87@Channel 1|24|97@Channel 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)1380@Channel 1|2350@Channel 2
Typical Gate Charge @ 10V (nC)29@Channel 1|39@Channel 2
Typical Gate Charge @ Vgs (nC)29@10V|12.5@4.5V@Channel 1|39@10V|17@4.5V@Channel 2
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)8|24@Channel 1|9|24@Channel 2
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)20|30@Channel 1|26|35@Channel 2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.7@Channel 1|11.4@Channel 2
Typical Input Capacitance @ Vds (pF)1535@15V@Channel 1|2290@15V@Channel 2
Maximum Drain Source Resistance (MOhm)17@10V@Channel 1|10@10V@Channel 2
Description
Trans MOSFET N-CH 30V 6.7A/11.4A 8-Pin SOIC N T/R
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