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SI4836DY-T1
SI4836DY-T1
MOSFETs SI4836DY-T1
Vishay
SI4836DY-T1
--
Diodes, Transistors and Thyristors
MOSFETs
SI4836DY-T1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Standard Package NameSOP
Typical Fall Time (ns)115
Typical Rise Time (ns)41
Number of Elements per Chip1
Maximum Power Dissipation (mW)3500
Typical Gate Charge @ Vgs (nC)51@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)35
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)190
Maximum Gate Threshold Voltage (V)0.4(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)17
Maximum Drain Source Resistance (mOhm)3@4.5V
Description
Trans MOSFET N-CH 12V 17A 8-Pin SOIC N T/R
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