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SI4856DY
SI4856DY
MOSFETs SI4856DY
Vishay
SI4856DY
--
Diodes, Transistors and Thyristors
MOSFETs
SI4856DY.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Standard Package NameSOP
Typical Fall Time (ns)16
Typical Rise Time (ns)10
Number of Elements per Chip1
Maximum Power Dissipation (mW)3000
Typical Gate Charge @ Vgs (nC)21@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)57
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12
Maximum Drain Source Resistance (mOhm)6@10V
Description
Trans MOSFET N-CH 30V 12A 8-Pin SOIC N
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