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SI4931DY-T1-E3
SI4931DY-T1-E3
MOSFETs SI4931DY-T1-E3
Vishay
SI4931DY-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)155
Typical Rise Time (ns)46
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ Vgs (nC)34.5@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)25
Maximum Drain Source Voltage (V)12
Typical Gate Plateau Voltage (V)1.5
Typical Turn-Off Delay Time (ns)230
Typical Gate to Drain Charge (nC)9.6
Maximum Gate Threshold Voltage (V)1
Minimum Gate Threshold Voltage (V)0.4
Typical Gate to Source Charge (nC)5.1
Typical Reverse Recovery Time (ns)128
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.7
Operating Junction Temperature (°C)-55 to 150
Maximum Drain Source Resistance (mOhm)18@4.5V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)8
Maximum Pulsed Drain Current @ TC=25°C (A)30
Maximum Power Dissipation on PCB @ TC=25°C (W)2000
Maximum Continuous Drain Current on PCB @ TC=25°C (A)6.7
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)110
Description
Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R
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