Product Attribute | Attribute Value |
HTS | 8541.29.00.95 |
PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 8 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Dual Dual Drain |
Package Width | 4(Max) |
Package Height | 1.55(Max) |
Package Length | 5(Max) |
Product Category | Power MOSFET |
Supplier Package | SOIC N |
Maximum IDSS (uA) | 1 |
Process Technology | TrenchFET |
Standard Package Name | SOP |
Typical Fall Time (ns) | 155 |
Typical Rise Time (ns) | 46 |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 2000 |
Typical Gate Charge @ Vgs (nC) | 34.5@4.5V |
Maximum Gate Source Voltage (V) | ±8 |
Typical Turn-On Delay Time (ns) | 25 |
Maximum Drain Source Voltage (V) | 12 |
Typical Gate Plateau Voltage (V) | 1.5 |
Typical Turn-Off Delay Time (ns) | 230 |
Typical Gate to Drain Charge (nC) | 9.6 |
Maximum Gate Threshold Voltage (V) | 1 |
Minimum Gate Threshold Voltage (V) | 0.4 |
Typical Gate to Source Charge (nC) | 5.1 |
Typical Reverse Recovery Time (ns) | 128 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 6.7 |
Operating Junction Temperature (°C) | -55 to 150 |
Maximum Drain Source Resistance (mOhm) | 18@4.5V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 8 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 30 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 2000 |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 6.7 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 110 |
Description |