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SI4946BEY
SI4946BEY
MOSFETs SI4946BEY
Vishay
SI4946BEY
--
Diodes, Transistors and Thyristors
MOSFETs
SI4946BEY.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)30|10
Typical Rise Time (ns)120|12
Number of Elements per Chip2
Maximum Power Dissipation (mW)2400
Typical Gate Charge @ 10V (nC)17
Typical Gate Charge @ Vgs (nC)9.2@5V|17@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)10|20
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)20|25
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.5
Typical Input Capacitance @ Vds (pF)840@30V
Maximum Drain Source Resistance (mOhm)41@10V
Description
Trans MOSFET N-CH 60V 6.5A 8-Pin SOIC N
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