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MOSFETs SI4966DY-T1-E3
Vishay
SI4966DY-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.10.00.80 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual Dual Drain |
| Package Width | 4(Max) |
| Package Height | 1.55(Max) |
| Package Length | 5(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SOIC N |
| Process Technology | TrenchFET |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 40 |
| Typical Rise Time (ns) | 40 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1000 |
| Typical Gate Charge @ Vgs (nC) | 25@4.5V |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Turn-On Delay Time (ns) | 40 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 90 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.5@N Channel|3.5@P Channel |
| Maximum Drain Source Resistance (mOhm) | 25@4.5V |
| Description |
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