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SI4980DY
SI4980DY
MOSFETs SI4980DY
Vishay
SI4980DY
--
Diodes, Transistors and Thyristors
MOSFETs
SI4980DY.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Standard Package NameSOP
Typical Fall Time (ns)10
Typical Rise Time (ns)10
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)15
Typical Gate Charge @ Vgs (nC)15@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)30
Typical Gate to Drain Charge (nC)3.2
Maximum Gate Threshold Voltage (V)2(Min)
Typical Gate to Source Charge (nC)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.7
Maximum Drain Source Resistance (mOhm)75@10V
Description
Trans MOSFET N-CH 80V 3.7A 8-Pin SOIC N
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