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SI5504DC-T1-E3
SI5504DC-T1-E3
MOSFETs SI5504DC-T1-E3
Vishay
SI5504DC-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.21.00.75
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width1.65
Package Height1.1(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackageChip FET
Process TechnologyTrenchFET
Standard Package NameChip FET
Typical Fall Time (ns)7@N Channel|8@P Channel
Typical Rise Time (ns)12@N Channel|11@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)2100
Typical Gate Charge @ 10V (nC)5@N Channel|5.5@P Channel
Typical Gate Charge @ Vgs (nC)5@10V@N Channel|5.5@10V@P Channel
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7@N Channel|8@P Channel
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)12@N Channel|14@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.9@N Channel|2.1@P Channel
Maximum Drain Source Resistance (MOhm)85@10V@N Channel|165@10V@P Channel
Description
Trans MOSFET N/P-CH 30V 2.9A/2.1A 8-Pin Chip FET T/R
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