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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI5513CDC-T1-E3
SI5513CDC-T1-E3
MOSFETs SI5513CDC-T1-E3
Vishay
SI5513CDC-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
SI5513CDC-T1-E3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width1.65
Package Height1.1(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackageChip FET
Process TechnologyTrenchFET
Standard Package NameChip FET
Typical Fall Time (ns)6@N Channel|8@P Channel
Typical Rise Time (ns)40@P Channel|12|9@N Channel|10
Number of Elements per Chip2
Maximum Power Dissipation (mW)1700@N Channel|1300@P Channel
Typical Gate Charge @ Vgs (nC)2.8@5V|2.6@4.5V@N Channel|3.9@5V|3.6@4.5V@P Channel
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)8@N Channel|4|19@P Channel|5
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)18@P Channel|15|16@N Channel|14
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4@N Channel|2.4@P Channel
Typical Input Capacitance @ Vds (pF)285@10V@N Channel|252@10V@P Channel
Maximum Drain Source Resistance (mOhm)55@4.5V@N Channel|150@4.5V@P Channel
Description
Trans MOSFET N/P-CH 20V 4A/2.4A 8-Pin Chip FET T/R
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