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MOSFETs SI5513CDC-T1-GE3
Vishay
SI5513CDC-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual Dual Drain |
| Package Width | 1.65 |
| Package Height | 1.1(Max) |
| Package Length | 3.05 |
| Product Category | Power MOSFET |
| Supplier Package | Chip FET |
| Standard Package Name | Chip FET |
| Typical Fall Time (ns) | 6@N Channel|8@P Channel |
| Typical Rise Time (ns) | 12|40@P Channel|10|9@N Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1700@N Channel|1300@P Channel |
| Typical Gate Charge @ Vgs (nC) | 2.8@5V|2.6@4.5V@N Channel|3.9@5V|3.6@4.5V@P Channel |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Turn-On Delay Time (ns) | 5|8@N Channel|4|19@P Channel |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 14|16@N Channel|15|18@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4@N Channel|2.4@P Channel |
| Typical Input Capacitance @ Vds (pF) | 285@10V@N Channel|252@10V@P Channel |
| Maximum Drain Source Resistance (MOhm) | 55@4.5V@N Channel|150@4.5V@P Channel |
| Description |
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