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MOSFETs SI5908DC-T1-GE3
Vishay
SI5908DC-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual Dual Drain |
| Package Width | 1.65 |
| Package Height | 1.1(Max) |
| Package Length | 3.05 |
| Product Category | Power MOSFET |
| Supplier Package | Chip FET |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Typical Fall Time (ns) | 12 |
| Typical Rise Time (ns) | 36 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2100 |
| Typical Gate Charge @ Vgs (nC) | 5@4.5V |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Output Capacitance (pF) | 98 |
| Typical Turn-On Delay Time (ns) | 20 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 1.3 |
| Typical Turn-Off Delay Time (ns) | 30 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 1 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Minimum Gate Threshold Voltage (V) | 0.4 |
| Typical Gate to Source Charge (nC) | 0.85 |
| Typical Reverse Recovery Time (ns) | 45 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.4 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Drain Source Resistance (mOhm) | 40@4.5V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 8 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 20 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.1 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 5.9 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 110 |
| Description |
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