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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI5933DC-T1-E3
SI5933DC-T1-E3
MOSFETs SI5933DC-T1-E3
Vishay
SI5933DC-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
SI5933DC-T1-E3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationDual Dual Drain
Package Width1.65
Package Height1.1(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackageChip FET
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameChip FET
Typical Fall Time (ns)27
Typical Rise Time (ns)30
Number of Elements per Chip2
Maximum Power Dissipation (mW)1100
Typical Gate Charge @ Vgs (nC)5.1@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)30
Maximum Gate Threshold Voltage (V)1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.7
Maximum Drain Source Resistance (mOhm)110@4.5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 20V 2.7A 8-Pin Chip FET T/R
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