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SI6423ADQ-T1-GE3
SI6423ADQ-T1-GE3
MOSFETs SI6423ADQ-T1-GE3
Vishay
SI6423ADQ-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Typical Fall Time (ns)39
Typical Rise Time (ns)4
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Typical Gate Charge @ Vgs (nC)112@8V|63@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)120
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10.3
Typical Input Capacitance @ Vds (pF)5875@10V
Maximum Drain Source Resistance (mOhm)9.8@4.5V
Description
Trans MOSFET P-CH 20V 10.3A T/R
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