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SI6423DQ-T1-GE3
SI6423DQ-T1-GE3
MOSFETs SI6423DQ-T1-GE3
Vishay
SI6423DQ-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Triple Drain Quad Source
Package Width4.4
Package Height1
Package Length3
Product CategoryPower MOSFET
Supplier PackageTSSOP
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)200
Typical Rise Time (ns)75
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Typical Gate Charge @ Vgs (nC)74@5V
Maximum Gate Source Voltage (V)±8
Typical Output Capacitance (pF)1599
Typical Turn-On Delay Time (ns)50
Maximum Drain Source Voltage (V)12
Typical Gate Plateau Voltage (V)1.6
Typical Turn-Off Delay Time (ns)270
Maximum Diode Forward Voltage (V)1.1
Typical Diode Forward Voltage (V)0.58
Typical Gate to Drain Charge (nC)19
Maximum Gate Threshold Voltage (V)0.8
Minimum Gate Threshold Voltage (V)0.4
Typical Gate to Source Charge (nC)9
Typical Reverse Recovery Time (ns)160
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8.2
Operating Junction Temperature (°C)-55 to 150
Maximum Drain Source Resistance (mOhm)8.5@4.5V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)8
Maximum Pulsed Drain Current @ TC=25°C (A)30
Maximum Power Dissipation on PCB @ TC=25°C (W)1.5
Maximum Continuous Drain Current on PCB @ TC=25°C (A)9.5
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)120
Description
Trans MOSFET P-CH 12V 8.2A 8-Pin TSSOP T/R
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