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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI6467BDQ-T1-GE3
SI6467BDQ-T1-GE3
MOSFETs SI6467BDQ-T1-GE3
Vishay
SI6467BDQ-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SI6467BDQ-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Triple Drain Quad Source
Package Width4.4
Package Height1
Package Length3
Product CategoryPower MOSFET
Supplier PackageTSSOP
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)155
Typical Rise Time (ns)85
Number of Elements per Chip1
Maximum Power Dissipation (mW)1050
Typical Gate Charge @ Vgs (nC)46@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)45
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)220
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.8
Maximum Drain Source Resistance (mOhm)12.5@4.5V
Description
Trans MOSFET P-CH 12V 6.8A 8-Pin TSSOP T/R
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