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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI6562CDQ-T1-GE3
SI6562CDQ-T1-GE3
MOSFETs SI6562CDQ-T1-GE3
Vishay
SI6562CDQ-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SI6562CDQ-T1-GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Source
Package Width4.4
Package Height1
Package Length3
Product CategoryPower MOSFET
Supplier PackageTSSOP
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)10@N Channel|15@P Channel
Typical Rise Time (ns)10@N Channel|25@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)1100@N Channel|1200@P Channel
Typical Gate Charge @ 10V (nC)15@N Channel|34@P Channel
Typical Gate Charge @ Vgs (nC)15@10V|6.7@4.5V@N Channel|34@10V|17@4.5V@P Channel
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)12@N Channel|30@P Channel
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)25@N Channel|45@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5.7@N Channel|5.1@P Channel
Typical Input Capacitance @ Vds (pF)850@10V@N Channel|1200@10V@P Channel
Maximum Drain Source Resistance (mOhm)22@4.5V@N Channel|30@4.5V@P Channel
Description
Trans MOSFET N/P-CH 20V 5.7A/5.1A 8-Pin TSSOP T/R
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