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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI6966EDG-T1-GE3
SI6966EDG-T1-GE3
MOSFETs SI6966EDG-T1-GE3
Vishay
SI6966EDG-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SI6966EDG-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Source
Package Width4.4
Package Height1
Package Length3
Product CategoryPower MOSFET
Supplier PackageTSSOP
Standard Package NameSOP
Typical Fall Time (ns)220
Typical Rise Time (ns)130
Number of Elements per Chip2
Maximum Power Dissipation (mW)1250
Typical Gate Charge @ Vgs (nC)15@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)100
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)420
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5.2
Maximum Drain Source Resistance (MOhm)30@4.5V
Description
Trans MOSFET N-CH Si 20V 5.2A 8-Pin TSSOP T/R
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