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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI6981DQ-T1-E3
SI6981DQ-T1-E3
MOSFETs SI6981DQ-T1-E3
Vishay
SI6981DQ-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
SI6981DQ-T1-E3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationDual Dual Source
Package Width4.4
Package Height1
Package Length3
Product CategoryPower MOSFET
Supplier PackageTSSOP
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)52
Typical Rise Time (ns)55
Number of Elements per Chip2
Maximum Power Dissipation (mW)1140
Typical Gate Charge @ Vgs (nC)15@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)35
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)120
Maximum Gate Threshold Voltage (V)0.9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.1
Maximum Drain Source Resistance (MOhm)31@4.5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 20V 4.1A 8-Pin TSSOP T/R
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