Product Attribute | Attribute Value |
HTS | 8541.29.00.95 |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
Lead Shape | No Lead |
PCB changed | 8 |
Part Status | Unconfirmed |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Triple Source |
Package Width | 3.05 |
Package Height | 1.07(Max) |
Package Length | 3.05 |
Product Category | Power MOSFET |
Supplier Package | PowerPAK 1212 |
Maximum IDSS (uA) | 1 |
Process Technology | TrenchFET |
Standard Package Name | PowerPAK 1212 |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 10 |
Typical Rise Time (ns) | 10 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 1500 |
Typical Gate Charge @ Vgs (nC) | 18@4.5V |
Maximum Gate Source Voltage (V) | ±12 |
Typical Output Capacitance (pF) | 340 |
Typical Turn-On Delay Time (ns) | 10 |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 65 |
Typical Gate to Drain Charge (nC) | 3.1 |
Maximum Gate Threshold Voltage (V) | 1.5 |
Typical Gate to Source Charge (nC) | 6.2 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -50 |
Maximum Continuous Drain Current (A) | 11.3 |
Typical Input Capacitance @ Vds (pF) | 2610@15V |
Typical Reverse Recovery Charge (nC) | 18 |
Maximum Drain Source Resistance (mOhm) | 7.5@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |