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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI7139DP-T1-GE3
SI7139DP-T1-GE3
MOSFETs SI7139DP-T1-GE3
Vishay
SI7139DP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SI7139DP-T1-GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO
Process TechnologyTrenchFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)12|24
Typical Rise Time (ns)12|58
Number of Elements per Chip1
Maximum Power Dissipation (mW)5000
Typical Gate Charge @ 10V (nC)97
Typical Gate Charge @ Vgs (nC)97@10V|49.5@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)17|70
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)56|47
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)40
Typical Input Capacitance @ Vds (pF)4230@15V
Maximum Drain Source Resistance (mOhm)5.5@10V
Description
Trans MOSFET P-CH 30V 40A 8-Pin PowerPAK SO T/R
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