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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI7149DP-T1-GE3
SI7149DP-T1-GE3
MOSFETs SI7149DP-T1-GE3
Vishay
SI7149DP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SI7149DP-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusNRND
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO EP
Process TechnologyTrenchFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)16|36
Typical Rise Time (ns)14|135
Number of Elements per Chip1
Maximum Power Dissipation (mW)5200
Typical Gate Charge @ 10V (nC)98
Typical Gate Charge @ Vgs (nC)98@10V|51@4.5V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)15|79
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)52|58
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)50
Typical Input Capacitance @ Vds (pF)4590@15V
Maximum Drain Source Resistance (mOhm)5.2@10V
Description
Trans MOSFET P-CH 30V 50A 8-Pin PowerPAK SO EP T/R
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