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SI7172DP-T1-GE3
SI7172DP-T1-GE3
MOSFETs SI7172DP-T1-GE3
Vishay
SI7172DP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO EP
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Typical Fall Time (ns)10|9
Typical Rise Time (ns)12|11
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)2
Maximum Power Dissipation (mW)5400
Typical Gate Charge @ 10V (nC)51
Typical Gate Charge @ Vgs (nC)34@6V|51@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)115
Typical Turn-On Delay Time (ns)15|22
Maximum Drain Source Voltage (V)200
Typical Gate Plateau Voltage (V)4.8
Typical Turn-Off Delay Time (ns)26|24
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.8
Typical Gate to Drain Charge (nC)15.5
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)14
Typical Reverse Recovery Time (ns)80
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)25
Typical Input Capacitance @ Vds (pF)2250@100V
Typical Reverse Recovery Charge (nC)275
Maximum Drain Source Resistance (mOhm)70@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Power Dissipation on PCB @ TC=25°C (W)5.4
Typical Reverse Transfer Capacitance @ Vds (pF)61@100V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)5.9
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)65
Description
Trans MOSFET N-CH 200V 25A 8-Pin PowerPAK SO EP T/R
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