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SI7190ADP-T1-RE3
SI7190ADP-T1-RE3
MOSFETs SI7190ADP-T1-RE3
Vishay
SI7190ADP-T1-RE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO EP
Typical Fall Time (ns)12
Typical Rise Time (ns)7
Number of Elements per Chip1
Maximum Power Dissipation (mW)5000
Typical Gate Charge @ 10V (nC)14.9
Typical Gate Charge @ Vgs (nC)11.7@7.5V|14.9@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)250
Typical Turn-Off Delay Time (ns)25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.3
Typical Input Capacitance @ Vds (pF)860@100V
Maximum Drain Source Resistance (mOhm)102@10V
Description
Trans MOSFET N-CH 250V 4.3A 8-Pin PowerPAK SO EP T/R
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