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SI7386DP-T1-E3
SI7386DP-T1-E3
MOSFETs SI7386DP-T1-E3
Vishay
SI7386DP-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.21.00.75
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO EP
Maximum IDSS (uA)1
Process TechnologyTrenchFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)10
Typical Rise Time (ns)9
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)2.5
Minimum Gate Resistance (Ohm)0.8
Maximum Power Dissipation (mW)5000
Typical Gate Charge @ Vgs (nC)11.5@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)3.4
Typical Turn-Off Delay Time (ns)35
Maximum Diode Forward Voltage (V)1.1
Typical Diode Forward Voltage (V)0.78
Typical Gate to Drain Charge (nC)3
Maximum Gate Threshold Voltage (V)2.5
Minimum Gate Threshold Voltage (V)1.5
Typical Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)5.8
Typical Reverse Recovery Time (ns)25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12
Operating Junction Temperature (°C)-55 to 150
Maximum Drain Source Resistance (MOhm)7@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)50
Maximum Power Dissipation on PCB @ TC=25°C (W)5
Maximum Continuous Drain Current on PCB @ TC=25°C (A)19
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)70
Description
Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK SO EP T/R
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