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SI7457DP-T1-GE3
SI7457DP-T1-GE3
MOSFETs SI7457DP-T1-GE3
Vishay
SI7457DP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.04
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO
Typical Fall Time (ns)60
Typical Rise Time (ns)115|30
Number of Elements per Chip1
Maximum Power Dissipation (mW)5200
Typical Gate Charge @ 10V (nC)105
Typical Gate Charge @ Vgs (nC)105@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)20|30
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)80|105
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)28
Typical Input Capacitance @ Vds (pF)5230@50V
Maximum Drain Source Resistance (MOhm)42@10V
Description
Trans MOSFET P-CH 100V 28A 8-Pin PowerPAK SO T/R
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