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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI7485DP-T1-E3
SI7485DP-T1-E3
MOSFETs SI7485DP-T1-E3
Vishay
SI7485DP-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
SI7485DP-T1-E3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO
Process TechnologyTrenchFET
Typical Fall Time (ns)170
Typical Rise Time (ns)140
Number of Elements per Chip1
Maximum Power Dissipation (mW)5000
Typical Gate Charge @ Vgs (nC)99@5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)80
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)360
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12.5
Maximum Drain Source Resistance (mOhm)7.3@4.5V
Description
Trans MOSFET P-CH 20V 12.5A 8-Pin PowerPAK SO T/R
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